Exploring Carbon Nanotubes for Next Generation of Energy Efficient Integrated Circuits

Страна: Франция;

Дедлайн: 01.04.2017

Веб-сайт: lirmm.fr

Title: Exploring Carbon Nanotubes for Next Generation of Energy Efficient Integrated Circuits

We are seeking a Post-Doc student to join our team at CNRS-LIRMM, Montpellier France in the EU H2020-ICT-CONNECT project with several EU industrial/academic partners such as CEA, CNRS, Fraunhofer, IBM, Synopsys, Aixtron, University of Glasgow and CNRS-LIRMM.

Description of Research Topic:
Carbon nanotubes (CNTs) have been proposed as a candidate material to build next generation of on-chip devices and interconnects in electronics. Their unique electrical, thermal, and mechanical properties are expected to meet the challenges of miniaturization and heat dissipation of future microsystems. To fully exploit the potential of CNTs, a number of problems must be solved. Progress must be made in CNT modeling and circuit analysis to improve the implementation quality of CNTs, and enhance signal, power and thermal integrity of circuits with CNT devices and interconnect. Furthermore, CNTs must be efficiently and reliably integrated with existing electronic design flows. The objective of this Post-Doc is to develop design space exploration of CNT devices and interconnects for energy efficiency. Physics-driven models will be devised to allow circuit design exploration where novel interconnect architecture will be explored for high bandwidth and energy efficiency. Additionally, implementation of process and design methods targeting carbon nanotube interconnects will be addressed (with industrial partners) such that they are compatible with CMOS back-end of line process and design flows.

Position Summary: The position is a one-year (with the possibility of extension) at the main location at CNRS-LIRMM/Univ. Montpellier (http://www.lirmm.fr/lirmm_eng) in Montpellier, France. CNRS is the top research institute in Europe in fundamental research. European mobility will be required for close interaction with project partners.

Qualifications: By the starting date, the applicant should have a Ph.D. degree in Engineering Physics, Applied Physics, Electrical/Computer Engineering, Nanoscience or equivalent. Solid knowledge in the areas of VLSI circuit design, circuit theory, and/or semiconductors is necessary. Any experience from device physics and theoretical modeling is a merit. You should have good analytical and experimental skills and good ability to work independently towards the goals expressed in the project plans.

Language: Fluency in English is mandatory. French can be learned but is not mandatory.

To apply: Please send the following documents to Dr. A. Todri-Sanial (todri@lirmm.fr):
- motivation letter
- CV
- publication list
- names of 2 referees
- copy of PhD diploma/transcript
Contact: Dr. A. Todri-Sanial
Microelectronics Department
161 rue Ada
Montpellier,  34095
Phone: +33467149753
Email: todrilirmm.fr