48th IEEE Semiconductor Interface Specialists Conference

Страна: США

Город: San Diego

Тезисы до: 14.08.2017

Даты: 06.12.17 — 09.12.17

Е-мейл Оргкомитета: http://www.ieeesisc.org/register.html

Организаторы: IEEE

 

The SISC is a workshop-style conference that provides a forum for device engineers, solid state physicists, and materials scientists to discuss topics of common interest, formally through invited and contributed presentations, and informally during various events including two poster presentation sessions. The SISC is sponsored by the IEEE Electron Device Society, and will be held right after the IEEE IEDM.

The program includes talks and poster presentations (theory and experiment) from all areas of MOS science and technology, including but not limited to:

    SiO2 and high-k dielectrics on Si and their interfaces
    Insulators on high-mobility and alternative substrates (SiGe, Ge, III-V and III-N, SiC, etc.)
    MOS gate stacks with metal gate electrodes
    Stacked dielectrics for non-volatile memory
    Oxide and interface structure, chemistry, defects, and passivation: theory and experiment
    Electrical characterization, performance and reliability of MOS-based devices
    Surface cleaning technology and impact on dielectrics and interfaces
    Dielectrics on nanowires, nanotubes, and graphene
    Oxide electronics and multiferroics
    Interfaces in photovoltaics, e.g. Si passivation
    2D materials and devices and their interfaces
    Interfaces in semiconductor lighting and optical communications
    Interfaces and surfaces in biotechnology such as bio-sensing

 

Веб-сайт конференции: http://www.ieeesisc.org/call.html