The 4th Int’l Conference on Semiconductor Physics and Devices (ICSPD 2019)

Страна: Китай

Город: Xi’an

Тезисы до: 20.07.2019

Даты: 20.08.19 — 22.08.19

Область наук: Физико-математические;

Е-мейл Оргкомитета: wsaugust@126.com

Организаторы: Engii

 

ICSPD 2019 will be an important and reliable platform for inspiring international and interdisciplinary exchange at the forefront of Semiconductor Physics and Devices.

The conference is soliciting state-of-the-art research papers in the following areas of interest: 
Complex Oxides
Compound Semiconductors
Device Design and Fabrication
Device Performance and Reliability
Emerging Semiconductor Technologies
Ferromagnetism / Magnetic Semiconductors
High Magnetic Fields / High Pressure in Semiconductor Physics
Impurities/Defects in Semiconductors
Light Emitting Diodes (LEDs) and Diode Lasers
Novel Semiconductor Devices and Applications
Organic Semiconductors
Photoelectric and Photovoltaic Devices
Physics of Semiconductors
Photophysics & Transient Absorption Spectroscopy/Measurements
Surface and Interface Physics
Semiconductor Lower Dimensions and Nanostructures
Semiconductor Quantum Dots / Quantum Hall Effects / Quantum Information
Semiconductor Materials and Applications / Semiconductor Processing
Semiconductor Spintronics / Topological Insulators
Semiconductor Detectors
Wide/narrow Band-gap Semiconductors

Веб-сайт конференции: http://www.wsaugust.org/conference/ICSPD2019/

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