25th International Conference on Defects in Semiconductors (ICDS-25)

Країна: Росія

Місто: Санкт-Петербург

Тези до: 20.07.2009

Дати: 20.07.09 — 24.07.09

Область наук: Фізико-математичні;

Address: Учреждение РАН Физико-технический институт им. А.Ф.Иоффе

Організатори: Учреждение РАН Физико-технический институт им. А.Ф.Иоффе

 

The conference will address the following current problems of basic and applied research: point and extended defects in semiconductors, among them native defects; shallow and deep impurities, including magnetic impurities and impurity- related complexes. Together with defects in bulk materials, those in low-dimensional and nanoscale structures and oxide layers will be considered. The range of materials of active interest will cover not only elementary and compound semiconductors, but also those of organic and magnetic types. Topics - Defects in diamond, Si, Ge, SiGe, and SiC - Defects in compound semiconductors - Magnetic impurities - Defects in organic semiconductors - Microscopic studies of defects - Positrons and muons in defect studies - Defects at interfaces - Defects in nanostructures and devices - Defect engineering - Spintronics and photovoltaics Language The official conference language is English. Последний день подачи заявки: 20 июля 2009 г. Организаторы: Учреждение РАН Физико-технический институт им. А.Ф.Иоффе Контактная информация: Полоскин Д.С., тел.: (812) 292-7152 Эл. почта: icds25@mail.ioffe.ru

Веб-сторінка конференції: http://www.konferencii.ru/info/id/1810